KM641003B
FEATURES
- Fast Access Time 8,10,12ns(Max.)
- Low Power Dissipation Standby (TTL) : 50 m A(Max.) (CMOS) : 10 m A(Max.) Operating KM641003B
- 8 : 150 m A(Max.) KM641003B
- 10 : 145 m A(Max.) KM641003B
- 12 : 140 m A(Max.)
- Single 5.0V ±10% Power Supply
- TTL patible Inputs and Outputs
- I/O patible with 3.3V Device
- Fully Static Operation
- No Clock or Refresh required
- Three State Outputs
- Center Power/Ground Pin Configuration
- Standard Pin Configuration KM641003BJ : 32-SOJ-400
Preliminary PRELIMINARY CMOS SRAM
GENERAL DESCRIPTION
The KM641003B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003B uses 4 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM641003B...
